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Datasheet File OCR Text: |
savantic semiconductor product specification silicon npn power transistors 2SC2594 d escription with to-126 package low saturation voltage applications af power amplifier for electronic flash unit converter pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (t c =25) symbol parameter conditions value unit v cbo collector-base voltage open emitter 40 v v ceo collector-emitter voltage open base 20 v v ebo emitter-base voltage open collector 7 v i c collector current -dc 5 a i cm collector current-peak 7 a p c collector power dissipation t c =25 10 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC2594 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =1ma i b =0 20 v v (br)cbo collector-base breakdown voltage i c =10a ;i e =0 40 v v (br)ebo emitter-base breakdown voltage i e =10a; i c =0 7 v v ce ( sat) collector-emitter saturation voltage i c =3.0a; i b =0.1a(pulse test) 1.0 v i cbo collector cut-off current v cb =10v; i e =0 0.1 a h fe-1 dc current gain i c =0.5a ; v ce =2v(pulse test) 140 450 h fe-2 dc current gain i c =1a ; v ce =2v(pulse test) 70 f t transition frequency i e =-50ma ; v cb =6v 150 mhz c ob output capacitance i e =0 ; v cb =20v,f=1mhz 50 pf savantic semiconductor product specification 3 silicon npn power transistors 2SC2594 p ackage outline fig.2 outline dimensions |
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